2.14GHz的0.13µm电感退化级联CMOS LNA

M. Muhamad, N. Soin, H. Ramiah, N. Noh, C. W. Keat
{"title":"2.14GHz的0.13µm电感退化级联CMOS LNA","authors":"M. Muhamad, N. Soin, H. Ramiah, N. Noh, C. W. Keat","doi":"10.1109/ISIEA.2011.6108680","DOIUrl":null,"url":null,"abstract":"A 130-nm CMOS low-noise amplifier (LNA) for WCDMA applications is presented. The circuit adopts an inductively degenerated cascode topology. A detailed methodology using power constraint noise optimization (PCNO) method that leads to an optimum width of the LNA is presented. A theoretical noise figure optimization using fixed power was used as a design optimization guide. This inductively degenerated cascade topology show good noise performance which it achieve a noise figure of 1.32dB while provides a forward gain, S21 of 18.24 dB from a 1.2V voltage supply. The input reflection coefficient, S11 is −19 dB.","PeriodicalId":110449,"journal":{"name":"2011 IEEE Symposium on Industrial Electronics and Applications","volume":"132 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A 0.13µm inductively degenerated cascode CMOS LNA at 2.14GHz\",\"authors\":\"M. Muhamad, N. Soin, H. Ramiah, N. Noh, C. W. Keat\",\"doi\":\"10.1109/ISIEA.2011.6108680\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 130-nm CMOS low-noise amplifier (LNA) for WCDMA applications is presented. The circuit adopts an inductively degenerated cascode topology. A detailed methodology using power constraint noise optimization (PCNO) method that leads to an optimum width of the LNA is presented. A theoretical noise figure optimization using fixed power was used as a design optimization guide. This inductively degenerated cascade topology show good noise performance which it achieve a noise figure of 1.32dB while provides a forward gain, S21 of 18.24 dB from a 1.2V voltage supply. The input reflection coefficient, S11 is −19 dB.\",\"PeriodicalId\":110449,\"journal\":{\"name\":\"2011 IEEE Symposium on Industrial Electronics and Applications\",\"volume\":\"132 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-12-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE Symposium on Industrial Electronics and Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISIEA.2011.6108680\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE Symposium on Industrial Electronics and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISIEA.2011.6108680","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

提出了一种用于WCDMA的130纳米CMOS低噪声放大器(LNA)。电路采用电感退化级联码拓扑结构。提出了一种使用功率约束噪声优化(PCNO)方法的详细方法,该方法可导致LNA的最佳宽度。采用固定功率的理论噪声系数优化作为设计优化的指导。这种电感退化级联拓扑结构具有良好的噪声性能,噪声系数为1.32dB,同时在1.2V电压下提供18.24 dB的正向增益S21。输入反射系数S11为−19 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
A 0.13µm inductively degenerated cascode CMOS LNA at 2.14GHz
A 130-nm CMOS low-noise amplifier (LNA) for WCDMA applications is presented. The circuit adopts an inductively degenerated cascode topology. A detailed methodology using power constraint noise optimization (PCNO) method that leads to an optimum width of the LNA is presented. A theoretical noise figure optimization using fixed power was used as a design optimization guide. This inductively degenerated cascade topology show good noise performance which it achieve a noise figure of 1.32dB while provides a forward gain, S21 of 18.24 dB from a 1.2V voltage supply. The input reflection coefficient, S11 is −19 dB.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Multi-user navigation: A 3D mobile device interactive support Optimization of Tesla turbine using Computational Fluid Dynamics approach Multi-output ZCS-SR inverter fed voltage multiplier based high voltage DC-DC converter An iterative method for designing high reliable standalone PV systems at minimum cost for Malaysia XILINX FPGA design for Sinusoidal Pulse Width Modulation (SPWM) control of Single-phase Matrix Converter
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1