{"title":"大功率开关操作中的晶体管失效模式","authors":"J. W. Mathews","doi":"10.1109/TBTR2.1962.4503215","DOIUrl":null,"url":null,"abstract":"It is desirable to use power transistors as switches up to their maximum collector-emitter voltage capability (BVcex). In this type operation, failure phenomena during switch-off have been observed and attributed in the literature to second breakdown, punch through, reach through, pinch off, and various types of energy level effects.","PeriodicalId":136909,"journal":{"name":"Ire Transactions on Broadcast and Television Receivers","volume":"80 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1962-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Transistor Failure Modes in High Power Switching Operation\",\"authors\":\"J. W. Mathews\",\"doi\":\"10.1109/TBTR2.1962.4503215\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"It is desirable to use power transistors as switches up to their maximum collector-emitter voltage capability (BVcex). In this type operation, failure phenomena during switch-off have been observed and attributed in the literature to second breakdown, punch through, reach through, pinch off, and various types of energy level effects.\",\"PeriodicalId\":136909,\"journal\":{\"name\":\"Ire Transactions on Broadcast and Television Receivers\",\"volume\":\"80 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1962-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Ire Transactions on Broadcast and Television Receivers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/TBTR2.1962.4503215\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Ire Transactions on Broadcast and Television Receivers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TBTR2.1962.4503215","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Transistor Failure Modes in High Power Switching Operation
It is desirable to use power transistors as switches up to their maximum collector-emitter voltage capability (BVcex). In this type operation, failure phenomena during switch-off have been observed and attributed in the literature to second breakdown, punch through, reach through, pinch off, and various types of energy level effects.
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