{"title":"Novel Ultra-Low-Voltage Flip-Flops: Near-Vth Modeling and VLSI Integration","authors":"A. Ranasinghe, S. H. Gerez","doi":"10.1109/ICCD53106.2021.00021","DOIUrl":null,"url":null,"abstract":"This paper presents two novel ultra-low-voltage (ULV) Single-Edge-Triggered flip-flops (SET-FF) based on the True-Single-Phase-Clocking (TSPC) scheme. By exploiting the TSPC principle, the overall energy efficiency has been improved compared to the traditional flip-flop designs while providing fully static, contention-free functionality to satisfy ULV operation. At 0.5V near-Vth level in 65nm bulk CMOS technology, the proposed SET-FFs demonstrate up to 11-45% and 7-20% of energy efficiency at 0% and 100% data activity rates compared to the best known SET-FFs. The proposed SET-FF can safely operate down to 0.24V of supply voltage without corrupting rail-to-rail voltage levels at its internal nodes. The integration of proposed SET-FFs in a 320-bit parallel shift register demonstrated up to 33% of clock network power, 17-39% of register power reductions compared to the state-of-the-art and commercial standard-cells at near-Vth level. In addition to these merits, with the aid of parasitic modeling, this paper re-evaluates the vital performance metrics of SET-FFs at near-Vth voltage domain, improving their characterization accuracy and enabling the VLSI integration for commercial end-use.","PeriodicalId":154014,"journal":{"name":"2021 IEEE 39th International Conference on Computer Design (ICCD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE 39th International Conference on Computer Design (ICCD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCD53106.2021.00021","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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摘要

本文提出了两种基于真单相时钟(TSPC)方案的新型超低电压(ULV)单边触发触发器(SET-FF)。通过利用TSPC原理,与传统触发器设计相比,整体能源效率得到了提高,同时提供了完全静态、无争用的功能,以满足ULV操作。在65nm块体CMOS技术的0.5V近v电平下,与最知名的set - ff相比,所提出的set - ff在0%和100%数据活动速率下的能效可达11-45%和7-20%。所提出的SET-FF可以安全地工作到低至0.24V的电源电压,而不会破坏其内部节点的轨对轨电压水平。在320位并行移位寄存器中集成所提出的set - ff,在接近v级的情况下,与最先进和商用标准单元相比,时钟网络功耗降低了33%,寄存器功耗降低了17-39%。除了这些优点之外,借助寄生建模,本文重新评估了近vth电压域的set - off的重要性能指标,提高了它们的表征精度,并使VLSI集成能够用于商业最终用途。
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Novel Ultra-Low-Voltage Flip-Flops: Near-Vth Modeling and VLSI Integration
This paper presents two novel ultra-low-voltage (ULV) Single-Edge-Triggered flip-flops (SET-FF) based on the True-Single-Phase-Clocking (TSPC) scheme. By exploiting the TSPC principle, the overall energy efficiency has been improved compared to the traditional flip-flop designs while providing fully static, contention-free functionality to satisfy ULV operation. At 0.5V near-Vth level in 65nm bulk CMOS technology, the proposed SET-FFs demonstrate up to 11-45% and 7-20% of energy efficiency at 0% and 100% data activity rates compared to the best known SET-FFs. The proposed SET-FF can safely operate down to 0.24V of supply voltage without corrupting rail-to-rail voltage levels at its internal nodes. The integration of proposed SET-FFs in a 320-bit parallel shift register demonstrated up to 33% of clock network power, 17-39% of register power reductions compared to the state-of-the-art and commercial standard-cells at near-Vth level. In addition to these merits, with the aid of parasitic modeling, this paper re-evaluates the vital performance metrics of SET-FFs at near-Vth voltage domain, improving their characterization accuracy and enabling the VLSI integration for commercial end-use.
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