电泵1.3 /spl mu/m vcsel与InP/气隙dbr

Summaries of Papers Presented at the Lasers and Electro-Optics. CLEO '02. Technical Diges Pub Date : 2002-05-24 DOI:10.1109/CLEO.2002.1034486

Chao-Kun Lin, D. Bour, Jintian Zhu, W. Perez, M. Leary, A. Tandon, S. Corzine, M. Tan

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摘要

我们展示了具有两个InP/气隙dbr的新型电泵浦1.3 p vcsel。该器件在室温连续波激励下的阈值电流密度低至1.3 kA/cm2，激光温度高达80°C。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Electrically pumped 1.3 /spl mu/m VCSELs with InP/air-gap DBRs

We demonstrate novel electrically pumped 1.3 p VCSELs with two InP/air-gap DBRs. The devices exhibit threshold current density as low as 1.3 kA/cm2 at room temperature with CW excitation, and lase up to 80°C.

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Summaries of Papers Presented at the Lasers and Electro-Optics. CLEO '02. Technical Diges

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