一种新颖的用于MEMS谐振器和振荡器的三维机械耦合阵列设计

Chin-Yu Chou, Ming-Huang Li, Chao-Yu Chen, Chun-You Liu, Sheng-Shian Li
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引用次数: 4

摘要

首次使用CMOS-MEMS技术演示了一种三维机械耦合谐振器阵列。通过台积电0.35 μm 2P4M CMOS-MEMS平台,利用高性能垂直耦合(VC) CMOS-MEMS谐振器对将阵列拓扑扩展为三维结构,并采用片上接口电路。制作了9对VC对(N = 18,其中N为阵列的组成谐振器数)的阵列设计,其谐振频率为5.64 MHz,0因子为1,092。与单个VC对(N = 2)相比,在阵列设计中,通过使用电极相位消除了鞍态(SA)模式(不希望的模式),代价是在期望共振周围产生弱杂散模式。采用仪器锁相+锁相环系统实现了三维阵列振荡器。在直流偏置相同的情况下,该阵列比单个VC对具有更好的功率处理和相位噪声性能。该技术有望为中型集成(MSI)微机械电路带来更多功能。
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An innovative 3-D mechanically-coupled array design for MEMS resonator and oscillators
A 3-D mechanically-coupled resonator array has been demonstrated for the first time using CMOS-MEMS technology. A high-performance vertically-coupled (VC) CMOS-MEMS resonator pair was utilized to extend the array topology into 3-D configuration with an on-chip interfaced circuit through a TSMC 0.35 μm 2P4M CMOS-MEMS platform. An array design of 9 VC pairs (N = 18 where N is the number of constituent resonators of an array) was fabricated and characterized with resonance frequency of 5.64 MHz and 0-factor of 1,092. As compared to a single VC pair (N = 2), the Saddle (SA) mode (undesired mode) was eliminated in the array design by the use of electrode phasing at the cost of weak spurious modes around the desired resonance. The 3-D array oscillator was also realized by using an instrumental Lock-in + PLL system. Under same dc biasing, the proposed 3-D array achieves better power handling and phase noise performance over the single VC pair. This technology is expected to bring more functionalities towards medium-scale integrated (MSI) micromechanical circuits.
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