Modeling and performance analysis of ballistic carbon nanotube field effect transistor (CNTFET)

In this paper, we have proposed the compact modeling of ballistic CNTFET and the performance analysis of the developed model using various characteristics. The carbon nanotube transistors (CNTFET) are currently considered and most promising component to replace the generation of MOSFET transistor, especially in order to surpass the short channel effects in the component. For this new generation of transistor (CNTFET) with very short channel, the majority of models describing electrical conduction based on the process of ballistic transport. We propose design-oriented compact models for ballistic CNTFET. We are interested more particularly to the drain current and the quantum capacitance as a function of the gate voltage (VGS), for various values of the nanotube diameter and the oxide thickness. These models have been simulated and the results that are obtained were in excellent agreement with the theoretical calculations.