{"title":"大功率有源器件(fet)的瞬态热分析","authors":"Liang Zhou, Zhe Wang, W. Yin, J. Mao","doi":"10.1109/MWSYM.2010.5517541","DOIUrl":null,"url":null,"abstract":"In this paper, effects of Transient Thermal Analysis for active devices (including GaAsFET, GaNHFET and LDMOSFET) under high power pulse in the communication systems are investigated. By using hybrid finite element methods, for example, the element-by-element finite element method (EBE-FEM) and the preconditioned conjugate gradient (PCG) technique, the thermal responses of the GaAsFET, GaNHFET, and LDMOS are extracted. These will be useful for further analyze the thermal effects so as to prevent on-chip device breakdown by the Impact of Intentional Electromagnetic Interference(IEMI).","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Transient Thermal Analysis of active device (FETs) for high-power applications\",\"authors\":\"Liang Zhou, Zhe Wang, W. Yin, J. Mao\",\"doi\":\"10.1109/MWSYM.2010.5517541\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, effects of Transient Thermal Analysis for active devices (including GaAsFET, GaNHFET and LDMOSFET) under high power pulse in the communication systems are investigated. By using hybrid finite element methods, for example, the element-by-element finite element method (EBE-FEM) and the preconditioned conjugate gradient (PCG) technique, the thermal responses of the GaAsFET, GaNHFET, and LDMOS are extracted. These will be useful for further analyze the thermal effects so as to prevent on-chip device breakdown by the Impact of Intentional Electromagnetic Interference(IEMI).\",\"PeriodicalId\":341557,\"journal\":{\"name\":\"2010 IEEE MTT-S International Microwave Symposium\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-05-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE MTT-S International Microwave Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2010.5517541\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE MTT-S International Microwave Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2010.5517541","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Transient Thermal Analysis of active device (FETs) for high-power applications
In this paper, effects of Transient Thermal Analysis for active devices (including GaAsFET, GaNHFET and LDMOSFET) under high power pulse in the communication systems are investigated. By using hybrid finite element methods, for example, the element-by-element finite element method (EBE-FEM) and the preconditioned conjugate gradient (PCG) technique, the thermal responses of the GaAsFET, GaNHFET, and LDMOS are extracted. These will be useful for further analyze the thermal effects so as to prevent on-chip device breakdown by the Impact of Intentional Electromagnetic Interference(IEMI).
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
