Temperature dependent electrical properties for planar Pentacene Schottky diode

In this work, 2D numerical simulation Pd/pentacene/Al planar Schottky diode using technology computer aided design (TCAD) has been reported. The TCAD is utilized to design and characterize the proposed organic Schottky diode. The current-voltage curve is performed at temperatures ranging from 260 K to 380 K with a step of 20 K. The effect of increasing the temperature on the device parameters, such as rectification ratio, barrier height, and ideal factor, is investigated. The calculated values for the main parameters at room temperature are saturation current (Is) = 3.53×10−12 A, barrier height (ΦB) = 1.18eV, ideal factor = 2.17 and rectification ratio = 3.55×106. The device exhibits with the increasing temperature a decrease in the ideal factor and rectification ratio and an increase in the barrier height and the saturation current. We also noticed that the value of the Richardson constant calculated conventionally from the temperature-dependent characteristic curve is much less than the theoretical value that we calculated by applying Richardson constant equation.