50mw 220 GHz功率放大器模块

2010 IEEE MTT-S International Microwave Symposium Pub Date : 2010-05-23 DOI:10.1109/MWSYM.2010.5515248

V. Radisic, K. Leong, X. Mei, S. Sarkozy, W. Yoshida, Po-Hsin Liu, J. Uyeda, R. Lai, W. Deal

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引用次数: 45

摘要

本文介绍了一种220 GHz固态功率放大器(SSPA)模块。8路片上功率组合用于在217.5至220 GHz带宽上实现≥50 mW的饱和输出功率，与现有技术相比，该频率下的SSPA输出功率显着增加。放大器MMIC采用共面波导(CPW)技术实现，并使用低于50 nm的InP HEMT晶体管。在CPW中实现了2∶1串联耦合器和4∶1 dolphor - chebychev变压器两级功率组合。该模块在207至230 GHz范围内具有≥11.5 dB的小信号增益。在216 ~ 222.5 GHz范围内测得饱和输出功率≥40 mW。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A 50 mW 220 GHz power amplifier module

In this paper, a 220 GHz solid-state power amplifier (SSPA) module is presented. Eight-way on-chip power combining is used to achieve a saturated output power ≥ 50 mW over a 217.5 to 220 GHz bandwidth, representing a significant increase in SSPA output power at this frequency compared to prior state of the art. The amplifier MMIC is implemented in coplanar waveguide (CPW) technology and uses sub 50 nm InP HEMT transistors. Two levels of power combining, a 2∶1 tandem coupler and a 4∶1 Dolph-Chebychev transformer, are realized in CPW. The module demonstrates ≥ 11.5 dB small signal gain from 207 to 230 GHz. Saturated output power ≥ 40 mW was measured from 216 to 222.5 GHz.

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2010 IEEE MTT-S International Microwave Symposium

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