K. Aripov, K. Bustanov, E. V. Ob’edkov, F. R. Nasirkhodjaev
{"title":"基于光电和注入光伏效应的通信设备功能节点设计。","authors":"K. Aripov, K. Bustanov, E. V. Ob’edkov, F. R. Nasirkhodjaev","doi":"10.1109/CANET.2007.4401705","DOIUrl":null,"url":null,"abstract":"The work is devoted to synthesis optoelectronic circuits of receiving nodes for telecommunication devices with amplification featuring enhanced work stability at high values of collector-emitter voltage, high working currents, i.e. in a mode with high dissipation power (several times higher comparing with any known modes of operations), which enables independent optimization of value of spectral sensitivity and amplification factor.","PeriodicalId":413993,"journal":{"name":"2007 3rd IEEE/IFIP International Conference in Central Asia on Internet","volume":"74 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design of functional nodes for telecommunication devices based on Photo- Voltaic and Injection-Voltaic Effects.\",\"authors\":\"K. Aripov, K. Bustanov, E. V. Ob’edkov, F. R. Nasirkhodjaev\",\"doi\":\"10.1109/CANET.2007.4401705\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The work is devoted to synthesis optoelectronic circuits of receiving nodes for telecommunication devices with amplification featuring enhanced work stability at high values of collector-emitter voltage, high working currents, i.e. in a mode with high dissipation power (several times higher comparing with any known modes of operations), which enables independent optimization of value of spectral sensitivity and amplification factor.\",\"PeriodicalId\":413993,\"journal\":{\"name\":\"2007 3rd IEEE/IFIP International Conference in Central Asia on Internet\",\"volume\":\"74 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-12-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 3rd IEEE/IFIP International Conference in Central Asia on Internet\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CANET.2007.4401705\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 3rd IEEE/IFIP International Conference in Central Asia on Internet","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CANET.2007.4401705","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design of functional nodes for telecommunication devices based on Photo- Voltaic and Injection-Voltaic Effects.
The work is devoted to synthesis optoelectronic circuits of receiving nodes for telecommunication devices with amplification featuring enhanced work stability at high values of collector-emitter voltage, high working currents, i.e. in a mode with high dissipation power (several times higher comparing with any known modes of operations), which enables independent optimization of value of spectral sensitivity and amplification factor.