{"title":"锗的阱浓度,从寿命测量测定及其与pn结整流器实际击穿电压的关系","authors":"F. Rose","doi":"10.1007/978-3-663-02557-3_23","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":351690,"journal":{"name":"Halbleiter und Phosphore","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1958-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Trap Concentrations in Germanium, their Determination from Lifetime Measurements and the Relation to a Practical Breakdown Voltage in p-n Junction Rectifiers\",\"authors\":\"F. Rose\",\"doi\":\"10.1007/978-3-663-02557-3_23\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":351690,\"journal\":{\"name\":\"Halbleiter und Phosphore\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1958-12-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Halbleiter und Phosphore\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1007/978-3-663-02557-3_23\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Halbleiter und Phosphore","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1007/978-3-663-02557-3_23","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Trap Concentrations in Germanium, their Determination from Lifetime Measurements and the Relation to a Practical Breakdown Voltage in p-n Junction Rectifiers