E. Bayer, W. Bucksch, K. Scoones, K. Wagensohner, J. Erdeljac, L. Hutter
{"title":"具有功率DMOS能力的1.0 /spl μ m线性BiCMOS技术","authors":"E. Bayer, W. Bucksch, K. Scoones, K. Wagensohner, J. Erdeljac, L. Hutter","doi":"10.1109/BIPOL.1995.493883","DOIUrl":null,"url":null,"abstract":"A 1.0 micron BiCMOS process, with lateral DMOS as an available process extension, is presented for mixed-signal and power applications, providing a broad range of active and passive components. The DMOS transistor offers 45-60 V capability with Rsp=1.25 m/spl Omega/.cm/sup 2/. The process has been used to build a 5A H-Bridge for automotive applications, the design of which is described in detail.","PeriodicalId":230944,"journal":{"name":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 1.0 /spl mu/m linear BiCMOS technology with power DMOS capability\",\"authors\":\"E. Bayer, W. Bucksch, K. Scoones, K. Wagensohner, J. Erdeljac, L. Hutter\",\"doi\":\"10.1109/BIPOL.1995.493883\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 1.0 micron BiCMOS process, with lateral DMOS as an available process extension, is presented for mixed-signal and power applications, providing a broad range of active and passive components. The DMOS transistor offers 45-60 V capability with Rsp=1.25 m/spl Omega/.cm/sup 2/. The process has been used to build a 5A H-Bridge for automotive applications, the design of which is described in detail.\",\"PeriodicalId\":230944,\"journal\":{\"name\":\"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.1995.493883\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1995.493883","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 1.0 /spl mu/m linear BiCMOS technology with power DMOS capability
A 1.0 micron BiCMOS process, with lateral DMOS as an available process extension, is presented for mixed-signal and power applications, providing a broad range of active and passive components. The DMOS transistor offers 45-60 V capability with Rsp=1.25 m/spl Omega/.cm/sup 2/. The process has been used to build a 5A H-Bridge for automotive applications, the design of which is described in detail.
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