{"title":"基于GaN的mmic的设计注意事项","authors":"C. Campbell, D. Dumka, M. Kao","doi":"10.1109/COMCAS.2009.5386036","DOIUrl":null,"url":null,"abstract":"Select considerations related to Gallium Nitride (GaN) based MMIC design are discussed. The unique properties of this material pose challenges to IC designers not typically encountered in Gallium Arsenide (GaAs) based technology. Specific examples of how some of these issues impact circuit design are discussed for wideband power amplifiers, high efficiency class-E power amplifiers and high power switching transistors.","PeriodicalId":372928,"journal":{"name":"2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems","volume":"120 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":"{\"title\":\"Design considerations for GaN based MMICs\",\"authors\":\"C. Campbell, D. Dumka, M. Kao\",\"doi\":\"10.1109/COMCAS.2009.5386036\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Select considerations related to Gallium Nitride (GaN) based MMIC design are discussed. The unique properties of this material pose challenges to IC designers not typically encountered in Gallium Arsenide (GaAs) based technology. Specific examples of how some of these issues impact circuit design are discussed for wideband power amplifiers, high efficiency class-E power amplifiers and high power switching transistors.\",\"PeriodicalId\":372928,\"journal\":{\"name\":\"2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems\",\"volume\":\"120 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"17\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMCAS.2009.5386036\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMCAS.2009.5386036","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Select considerations related to Gallium Nitride (GaN) based MMIC design are discussed. The unique properties of this material pose challenges to IC designers not typically encountered in Gallium Arsenide (GaAs) based technology. Specific examples of how some of these issues impact circuit design are discussed for wideband power amplifiers, high efficiency class-E power amplifiers and high power switching transistors.
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