商业智能的知识

International Conference on Information Technology Interfaces Pub Date : 2012-06-25 DOI:10.2498/iti.2012.0484

C. Holsapple

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引用次数: 0

摘要

只提供摘要形式。电荷泵送(CP)是一种众所周知的半导体-绝缘体界面陷阱电学表征技术。它是在四十多年前提出的，主要应用于mosfet，因为它需要在反转和积累之间切换器件。因此，到目前为止，它主要用于研究si - sio2体系和伴随的MOSFET缩放。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The knowledge of business intelligence

Summary form only given. Charge pumping (CP) is a well-known technique for electrical characterization of semiconductor-insulator interface traps. It has been proposed more than four decades ago and applies primarily to MOSFETs as it requires the switching of the device between inversion and accumulation. Until now, it has therefore been mainly used to study the Si-SiO 2 system and accompanied MOSFET scaling.

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International Conference on Information Technology Interfaces

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