{"title":"热二极管开路电压模型","authors":"P. Hagelstein, Y. Kucherov","doi":"10.1109/ICT.2005.1519985","DOIUrl":null,"url":null,"abstract":"We have developed a nonlocal generalization of the Onsager current relation to study the enhancement of the open-circuit voltage observed in InSb thermal diode experiments. Numerical solutions are obtained by brute force. Nonlocal effects produce an apparent enhancement of the thermopower in regions where the doping concentration changes. Models show voltage drops associated with npn barriers similar to experiment below 350 K, but are not as great as experimental results at high temperature near 600 K. This is thought to be due to thermal drops at the barrier not accounted for so far.","PeriodicalId":422400,"journal":{"name":"ICT 2005. 24th International Conference on Thermoelectrics, 2005.","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Models for the thermal diode open-circuit voltage\",\"authors\":\"P. Hagelstein, Y. Kucherov\",\"doi\":\"10.1109/ICT.2005.1519985\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have developed a nonlocal generalization of the Onsager current relation to study the enhancement of the open-circuit voltage observed in InSb thermal diode experiments. Numerical solutions are obtained by brute force. Nonlocal effects produce an apparent enhancement of the thermopower in regions where the doping concentration changes. Models show voltage drops associated with npn barriers similar to experiment below 350 K, but are not as great as experimental results at high temperature near 600 K. This is thought to be due to thermal drops at the barrier not accounted for so far.\",\"PeriodicalId\":422400,\"journal\":{\"name\":\"ICT 2005. 24th International Conference on Thermoelectrics, 2005.\",\"volume\":\"40 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-06-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICT 2005. 24th International Conference on Thermoelectrics, 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICT.2005.1519985\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICT 2005. 24th International Conference on Thermoelectrics, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICT.2005.1519985","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We have developed a nonlocal generalization of the Onsager current relation to study the enhancement of the open-circuit voltage observed in InSb thermal diode experiments. Numerical solutions are obtained by brute force. Nonlocal effects produce an apparent enhancement of the thermopower in regions where the doping concentration changes. Models show voltage drops associated with npn barriers similar to experiment below 350 K, but are not as great as experimental results at high temperature near 600 K. This is thought to be due to thermal drops at the barrier not accounted for so far.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
