{"title":"功率双极器件的导通物理学批判","authors":"S. Pendharkar, K. Shenai","doi":"10.1109/BIPOL.1995.493900","DOIUrl":null,"url":null,"abstract":"This paper compares the turn-on performance of a vertical p-i-n diode and IGBT, under zero-voltage switching (ZVS). Although both the devices are \"conductivity modulated\" during turn-on, the IGBT carrier dynamics distinctly differ from that of a p-i-n diode. It is shown that, for identical drift region parameters, the conductivity modulation in IGBT is significantly lower compared to that in a p-i-n rectifier mainly because of carrier flow constraints in the IGBT and its inherent bipolar transistor-like nature. Two-dimensional (2D) mixed device and circuit simulations are performed to understand the behavior of the two devices during turn-on under ZVS.","PeriodicalId":230944,"journal":{"name":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A critique of the turn-on physics of power bipolar devices\",\"authors\":\"S. Pendharkar, K. Shenai\",\"doi\":\"10.1109/BIPOL.1995.493900\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper compares the turn-on performance of a vertical p-i-n diode and IGBT, under zero-voltage switching (ZVS). Although both the devices are \\\"conductivity modulated\\\" during turn-on, the IGBT carrier dynamics distinctly differ from that of a p-i-n diode. It is shown that, for identical drift region parameters, the conductivity modulation in IGBT is significantly lower compared to that in a p-i-n rectifier mainly because of carrier flow constraints in the IGBT and its inherent bipolar transistor-like nature. Two-dimensional (2D) mixed device and circuit simulations are performed to understand the behavior of the two devices during turn-on under ZVS.\",\"PeriodicalId\":230944,\"journal\":{\"name\":\"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.1995.493900\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1995.493900","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A critique of the turn-on physics of power bipolar devices
This paper compares the turn-on performance of a vertical p-i-n diode and IGBT, under zero-voltage switching (ZVS). Although both the devices are "conductivity modulated" during turn-on, the IGBT carrier dynamics distinctly differ from that of a p-i-n diode. It is shown that, for identical drift region parameters, the conductivity modulation in IGBT is significantly lower compared to that in a p-i-n rectifier mainly because of carrier flow constraints in the IGBT and its inherent bipolar transistor-like nature. Two-dimensional (2D) mixed device and circuit simulations are performed to understand the behavior of the two devices during turn-on under ZVS.
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