phemt的信号和噪声神经模型

6th Seminar on Neural Network Applications in Electrical Engineering Pub Date : 2002-12-10 DOI:10.1109/NEUREL.2002.1057995

V. Markovic, Z. Marinković

{"title":"phemt的信号和噪声神经模型","authors":"V. Markovic, Z. Marinković","doi":"10.1109/NEUREL.2002.1057995","DOIUrl":null,"url":null,"abstract":"Low-noise pHEMT transistors, that have excellent performances at microwave frequencies, can be described by their scattering and noise parameters. In this paper, a pHEMT neural model, based on multilayer perceptron neural networks is proposed. The obtained neural models can predict transistor's signal and noise performances very efficiently and accurately for a broad range of bias conditions in the operating frequency range.","PeriodicalId":347066,"journal":{"name":"6th Seminar on Neural Network Applications in Electrical Engineering","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Signal and noise neural models of pHEMTs\",\"authors\":\"V. Markovic, Z. Marinković\",\"doi\":\"10.1109/NEUREL.2002.1057995\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Low-noise pHEMT transistors, that have excellent performances at microwave frequencies, can be described by their scattering and noise parameters. In this paper, a pHEMT neural model, based on multilayer perceptron neural networks is proposed. The obtained neural models can predict transistor's signal and noise performances very efficiently and accurately for a broad range of bias conditions in the operating frequency range.\",\"PeriodicalId\":347066,\"journal\":{\"name\":\"6th Seminar on Neural Network Applications in Electrical Engineering\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"6th Seminar on Neural Network Applications in Electrical Engineering\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NEUREL.2002.1057995\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"6th Seminar on Neural Network Applications in Electrical Engineering","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NEUREL.2002.1057995","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

摘要

低噪声pHEMT晶体管在微波频率下具有优异的性能，可以用其散射和噪声参数来描述。本文提出了一种基于多层感知器神经网络的pHEMT神经模型。所得到的神经网络模型可以在工作频率范围内的宽偏置条件下非常有效和准确地预测晶体管的信号和噪声性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Signal and noise neural models of pHEMTs

Low-noise pHEMT transistors, that have excellent performances at microwave frequencies, can be described by their scattering and noise parameters. In this paper, a pHEMT neural model, based on multilayer perceptron neural networks is proposed. The obtained neural models can predict transistor's signal and noise performances very efficiently and accurately for a broad range of bias conditions in the operating frequency range.

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6th Seminar on Neural Network Applications in Electrical Engineering

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