mHEMT MMIC技术中的全w波段高增益LNA

2008 European Microwave Integrated Circuit Conference Pub Date : 2008-10-01 DOI:10.1109/EMICC.2008.4772292

W. Ciccognani, F. Giannini, E. Limiti, P. Longhi

{"title":"mHEMT MMIC技术中的全w波段高增益LNA","authors":"W. Ciccognani, F. Giannini, E. Limiti, P. Longhi","doi":"10.1109/EMICC.2008.4772292","DOIUrl":null,"url":null,"abstract":"In this contribution the possible applications, technology, design and measurements of a W-Band high gain LNA are given. The main features of the four stage LNA can be summarised as following: a 25 dB average gain with plusmn2 dB ripple from 70 to 105 GHz, where gain is higher than 21 dB on the entire 70-110 GHz range. LNA predicted noise figure is 2.7 dB between 80 and 95GHz and less than 3.2 dB up to 108 GHz while the chip's power consumption is 35 mW. The technology used is a 70 nm GaAs mHEMT process from OMMIC.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":"{\"title\":\"Full W-Band High-Gain LNA in mHEMT MMIC Technology\",\"authors\":\"W. Ciccognani, F. Giannini, E. Limiti, P. Longhi\",\"doi\":\"10.1109/EMICC.2008.4772292\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this contribution the possible applications, technology, design and measurements of a W-Band high gain LNA are given. The main features of the four stage LNA can be summarised as following: a 25 dB average gain with plusmn2 dB ripple from 70 to 105 GHz, where gain is higher than 21 dB on the entire 70-110 GHz range. LNA predicted noise figure is 2.7 dB between 80 and 95GHz and less than 3.2 dB up to 108 GHz while the chip's power consumption is 35 mW. The technology used is a 70 nm GaAs mHEMT process from OMMIC.\",\"PeriodicalId\":344657,\"journal\":{\"name\":\"2008 European Microwave Integrated Circuit Conference\",\"volume\":\"45 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"20\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 European Microwave Integrated Circuit Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EMICC.2008.4772292\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 European Microwave Integrated Circuit Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMICC.2008.4772292","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 20

摘要

本文给出了w波段高增益LNA的可能应用、技术、设计和测量方法。四级LNA的主要特点可以概括如下:在70至105 GHz范围内，平均增益为25 dB，纹波为+ mn2 dB，在整个70-110 GHz范围内，增益高于21 dB。LNA预测噪声系数在80 ~ 95GHz范围内为2.7 dB，在108ghz范围内小于3.2 dB，而芯片功耗为35 mW。所使用的技术是来自OMMIC的70纳米GaAs mHEMT工艺。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Full W-Band High-Gain LNA in mHEMT MMIC Technology

In this contribution the possible applications, technology, design and measurements of a W-Band high gain LNA are given. The main features of the four stage LNA can be summarised as following: a 25 dB average gain with plusmn2 dB ripple from 70 to 105 GHz, where gain is higher than 21 dB on the entire 70-110 GHz range. LNA predicted noise figure is 2.7 dB between 80 and 95GHz and less than 3.2 dB up to 108 GHz while the chip's power consumption is 35 mW. The technology used is a 70 nm GaAs mHEMT process from OMMIC.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2008 European Microwave Integrated Circuit Conference

自引率

0.00%

发文量