O. Tokel, A. Turnali, P. Deminskyi, S. Ilday, F. Ilday
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Laser Writing of Nanostructures Deep Inside Gallium Arsenide (GaAs)
Recently, we have showed a direct laser writing method that enables the first subsurface modifications and functional devices created deep inside silicon. Here, we extend the technique demonstrating the first controlled subsurface nanostructures in GaAs.
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