J. Plouchart, Jonghae Kim, H. Recoules, N. Zamdmer, Yue Tan, M. Sherony, A. Ray, L. Wagner
{"title":"一个0.123 mW 7.25 GHz静态分频器,采用8级120nm SOI技术","authors":"J. Plouchart, Jonghae Kim, H. Recoules, N. Zamdmer, Yue Tan, M. Sherony, A. Ray, L. Wagner","doi":"10.1145/871506.871615","DOIUrl":null,"url":null,"abstract":"A static frequency divider by 8 was fabricated in a 120 nm SOI technology. The highest operation frequency achieved is 8.25 GHz at 1.5 V power supply. The lowest core power consumption achieved is 0.016 mW at 4 GHz when the lowest operating voltage supply of 0.75 V is used.","PeriodicalId":355883,"journal":{"name":"Proceedings of the 2003 International Symposium on Low Power Electronics and Design, 2003. ISLPED '03.","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A 0.123 mW 7.25 GHz static frequency divider by 8 in a 120-nm SOI technology\",\"authors\":\"J. Plouchart, Jonghae Kim, H. Recoules, N. Zamdmer, Yue Tan, M. Sherony, A. Ray, L. Wagner\",\"doi\":\"10.1145/871506.871615\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A static frequency divider by 8 was fabricated in a 120 nm SOI technology. The highest operation frequency achieved is 8.25 GHz at 1.5 V power supply. The lowest core power consumption achieved is 0.016 mW at 4 GHz when the lowest operating voltage supply of 0.75 V is used.\",\"PeriodicalId\":355883,\"journal\":{\"name\":\"Proceedings of the 2003 International Symposium on Low Power Electronics and Design, 2003. ISLPED '03.\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-08-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 2003 International Symposium on Low Power Electronics and Design, 2003. ISLPED '03.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1145/871506.871615\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2003 International Symposium on Low Power Electronics and Design, 2003. ISLPED '03.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/871506.871615","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 0.123 mW 7.25 GHz static frequency divider by 8 in a 120-nm SOI technology
A static frequency divider by 8 was fabricated in a 120 nm SOI technology. The highest operation frequency achieved is 8.25 GHz at 1.5 V power supply. The lowest core power consumption achieved is 0.016 mW at 4 GHz when the lowest operating voltage supply of 0.75 V is used.