基于数字SOI CMOS技术的功率优化宽可调谐5 ghz单片压控振荡器。在高电阻率衬底上

Jonghae Kim, J. Plouchart, N. Zamdmer, M. Sherony, Yue Tan, Meeyoung Yoon, R. Trzcinski, Mosbah Talbi, J. Safran, A. Ray, L. Wagner
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引用次数: 1

摘要

本文介绍了一种低功耗、宽调谐范围的单片压控振荡器的设计和工艺优化。4个5 ghz LC-tank vco采用0.12-/spl mu/m SOI CMOS技术制造,该技术未针对RF应用进行增强。采用高电阻率和规则电阻率衬底,以及单层和多层铜电感器。使用包含功耗、相位噪声和调谐范围的新性能指标(FOM/sub T/),我们最好的VCO的FOM/sub T/为-189 dBc/Hz。测量频率调谐范围为22%,相位噪声为126 dBc/Hz,偏移量为1 MHz,频率为4.5 ghz。在5.4 ghz频率下实现振荡,最低功耗为500 /spl mu/W。
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A power-optimized widely-tunable 5-GHz monolithic VCO in a digital SOI CMOS technology. On high resistivity substrate
This paper describes the design and technology optimization of power-efficient monolithic VCOs with wide tuning range. Four 5-GHz LC-tank VCOs were fabricated in a 0.12-/spl mu/m SOI CMOS technology that was not enhanced for RF applications. High and regular resistivity substrates were used, as were single-layer and multiple-layer copper inductors. Using a new figure-of-merit (FOM/sub T/) that encompasses power dissipation, phase noise and tuning range, our best VCO has an FOM/sub T/ of -189 dBc/Hz. The measured frequency tuning range is 22 % and the phase noise is 126 dBc/Hz at 1 MHz offset for 4.5-GHz. Oscillation was achieved at 5.4-GHz at a minimum power consumption of 500 /spl mu/W.
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