Jonghae Kim, J. Plouchart, N. Zamdmer, M. Sherony, Yue Tan, Meeyoung Yoon, R. Trzcinski, Mosbah Talbi, J. Safran, A. Ray, L. Wagner
{"title":"基于数字SOI CMOS技术的功率优化宽可调谐5 ghz单片压控振荡器。在高电阻率衬底上","authors":"Jonghae Kim, J. Plouchart, N. Zamdmer, M. Sherony, Yue Tan, Meeyoung Yoon, R. Trzcinski, Mosbah Talbi, J. Safran, A. Ray, L. Wagner","doi":"10.1109/LPE.2003.1231944","DOIUrl":null,"url":null,"abstract":"This paper describes the design and technology optimization of power-efficient monolithic VCOs with wide tuning range. Four 5-GHz LC-tank VCOs were fabricated in a 0.12-/spl mu/m SOI CMOS technology that was not enhanced for RF applications. High and regular resistivity substrates were used, as were single-layer and multiple-layer copper inductors. Using a new figure-of-merit (FOM/sub T/) that encompasses power dissipation, phase noise and tuning range, our best VCO has an FOM/sub T/ of -189 dBc/Hz. The measured frequency tuning range is 22 % and the phase noise is 126 dBc/Hz at 1 MHz offset for 4.5-GHz. Oscillation was achieved at 5.4-GHz at a minimum power consumption of 500 /spl mu/W.","PeriodicalId":355883,"journal":{"name":"Proceedings of the 2003 International Symposium on Low Power Electronics and Design, 2003. ISLPED '03.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A power-optimized widely-tunable 5-GHz monolithic VCO in a digital SOI CMOS technology. On high resistivity substrate\",\"authors\":\"Jonghae Kim, J. Plouchart, N. Zamdmer, M. Sherony, Yue Tan, Meeyoung Yoon, R. Trzcinski, Mosbah Talbi, J. Safran, A. Ray, L. Wagner\",\"doi\":\"10.1109/LPE.2003.1231944\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes the design and technology optimization of power-efficient monolithic VCOs with wide tuning range. Four 5-GHz LC-tank VCOs were fabricated in a 0.12-/spl mu/m SOI CMOS technology that was not enhanced for RF applications. High and regular resistivity substrates were used, as were single-layer and multiple-layer copper inductors. Using a new figure-of-merit (FOM/sub T/) that encompasses power dissipation, phase noise and tuning range, our best VCO has an FOM/sub T/ of -189 dBc/Hz. The measured frequency tuning range is 22 % and the phase noise is 126 dBc/Hz at 1 MHz offset for 4.5-GHz. Oscillation was achieved at 5.4-GHz at a minimum power consumption of 500 /spl mu/W.\",\"PeriodicalId\":355883,\"journal\":{\"name\":\"Proceedings of the 2003 International Symposium on Low Power Electronics and Design, 2003. ISLPED '03.\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 2003 International Symposium on Low Power Electronics and Design, 2003. ISLPED '03.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LPE.2003.1231944\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2003 International Symposium on Low Power Electronics and Design, 2003. ISLPED '03.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LPE.2003.1231944","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A power-optimized widely-tunable 5-GHz monolithic VCO in a digital SOI CMOS technology. On high resistivity substrate
This paper describes the design and technology optimization of power-efficient monolithic VCOs with wide tuning range. Four 5-GHz LC-tank VCOs were fabricated in a 0.12-/spl mu/m SOI CMOS technology that was not enhanced for RF applications. High and regular resistivity substrates were used, as were single-layer and multiple-layer copper inductors. Using a new figure-of-merit (FOM/sub T/) that encompasses power dissipation, phase noise and tuning range, our best VCO has an FOM/sub T/ of -189 dBc/Hz. The measured frequency tuning range is 22 % and the phase noise is 126 dBc/Hz at 1 MHz offset for 4.5-GHz. Oscillation was achieved at 5.4-GHz at a minimum power consumption of 500 /spl mu/W.