{"title":"宽带GaN功率放大器的设计","authors":"Li Yuchao, Zhong Shichang, Lu Wei","doi":"10.1109/ICMMT.2018.8563697","DOIUrl":null,"url":null,"abstract":"This paper presents a new GaN broadband and internally matched power amplifier. The coexistent technology of L-section multisession transformer and negative feedback is used. Using one 3.6 mm power GaN HEMT die, made by Nanjing Electronic Devices Institute. The amplifier demons rates an output power of more than 40dBm with a power gain of over 12.5 dB and relative wideband of 148% and the typical PAE of 40% across the band of 0.3-2.0GHz.","PeriodicalId":190601,"journal":{"name":"2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Design of a Broadband GaN Power Amplifier\",\"authors\":\"Li Yuchao, Zhong Shichang, Lu Wei\",\"doi\":\"10.1109/ICMMT.2018.8563697\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a new GaN broadband and internally matched power amplifier. The coexistent technology of L-section multisession transformer and negative feedback is used. Using one 3.6 mm power GaN HEMT die, made by Nanjing Electronic Devices Institute. The amplifier demons rates an output power of more than 40dBm with a power gain of over 12.5 dB and relative wideband of 148% and the typical PAE of 40% across the band of 0.3-2.0GHz.\",\"PeriodicalId\":190601,\"journal\":{\"name\":\"2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT)\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-05-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMMT.2018.8563697\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMMT.2018.8563697","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper presents a new GaN broadband and internally matched power amplifier. The coexistent technology of L-section multisession transformer and negative feedback is used. Using one 3.6 mm power GaN HEMT die, made by Nanjing Electronic Devices Institute. The amplifier demons rates an output power of more than 40dBm with a power gain of over 12.5 dB and relative wideband of 148% and the typical PAE of 40% across the band of 0.3-2.0GHz.
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