低温下Si和SiGe双极晶体管非平衡基底输运的证据

Proceedings of Bipolar/Bicmos Circuits and Technology Meeting Pub Date : 1995-10-02 DOI:10.1109/BIPOL.1995.493860

D. M. Richey, A. Joseph, J. Cressler, R. Jaeger

{"title":"低温下Si和SiGe双极晶体管非平衡基底输运的证据","authors":"D. M. Richey, A. Joseph, J. Cressler, R. Jaeger","doi":"10.1109/BIPOL.1995.493860","DOIUrl":null,"url":null,"abstract":"Observed discrepancies between measured collector current and transconductance with that predicted by standard drift-diffusion theory at cryogenic temperatures are explained by accounting for nonequilibrium carrier transport across the neutral base region in advanced Si and SiGe bipolar devices.","PeriodicalId":230944,"journal":{"name":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","volume":"172 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Evidence for nonequilibrium base transport in Si and SiGe bipolar transistors at cryogenic temperatures\",\"authors\":\"D. M. Richey, A. Joseph, J. Cressler, R. Jaeger\",\"doi\":\"10.1109/BIPOL.1995.493860\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Observed discrepancies between measured collector current and transconductance with that predicted by standard drift-diffusion theory at cryogenic temperatures are explained by accounting for nonequilibrium carrier transport across the neutral base region in advanced Si and SiGe bipolar devices.\",\"PeriodicalId\":230944,\"journal\":{\"name\":\"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting\",\"volume\":\"172 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.1995.493860\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1995.493860","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

通过计算先进Si和SiGe双极器件中中性基区的非平衡载流子输运，可以解释在低温下测量到的集电极电流和跨导与标准漂移扩散理论预测的差异。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Evidence for nonequilibrium base transport in Si and SiGe bipolar transistors at cryogenic temperatures

Observed discrepancies between measured collector current and transconductance with that predicted by standard drift-diffusion theory at cryogenic temperatures are explained by accounting for nonequilibrium carrier transport across the neutral base region in advanced Si and SiGe bipolar devices.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of Bipolar/Bicmos Circuits and Technology Meeting

自引率

0.00%

发文量

期刊最新文献

A BiCMOS fully-differential 10-bit 40 MHz pipelined ADC Efficient parameter extraction for the MEXTRAM model Improved collector transit time with ballistic pipi-structure in the npn-AlGaAs/GaAs HBT Silicon bipolar 12 GHz downconverter for satellite receivers Predictive modelling of lateral scaling in bipolar transistors