David Watté, Yizhe Hu, T. Siriburanon, R. Staszewski
{"title":"基于28nm CMOS的5G毫米波通信非线性I/Q数字PA设计","authors":"David Watté, Yizhe Hu, T. Siriburanon, R. Staszewski","doi":"10.1109/ISSC49989.2020.9180196","DOIUrl":null,"url":null,"abstract":"This paper presents the design of a DPA for 5G telecommunications applications in TSMC (Taiwan Semiconductor Manufacturing Company) 28 nm CMOS. A modified Gilbert cell is proposed to perform the function of amplification and reversing the phase within a compact layout, improving the efficiency. To overcome the linearity issue of DPAs, a non-linear sizing technique of the PA cells is employed. The effective widths of relative bit cells need to be increased to conform to non-linear sizing thus providing linearity with acceptable INL (Integral Non-Linearity)and DNL (Differential Non-Linearity) results. The simulated saturated output power is 11.7 dBm with power added efficiency at 13 percent with the device working off a carrier frequency of 28 GHz.","PeriodicalId":351013,"journal":{"name":"2020 31st Irish Signals and Systems Conference (ISSC)","volume":"10 12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design of a Non-Linear Sized I/Q Digital PA for 5G mm-Wave Communications in 28 nm CMOS\",\"authors\":\"David Watté, Yizhe Hu, T. Siriburanon, R. Staszewski\",\"doi\":\"10.1109/ISSC49989.2020.9180196\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the design of a DPA for 5G telecommunications applications in TSMC (Taiwan Semiconductor Manufacturing Company) 28 nm CMOS. A modified Gilbert cell is proposed to perform the function of amplification and reversing the phase within a compact layout, improving the efficiency. To overcome the linearity issue of DPAs, a non-linear sizing technique of the PA cells is employed. The effective widths of relative bit cells need to be increased to conform to non-linear sizing thus providing linearity with acceptable INL (Integral Non-Linearity)and DNL (Differential Non-Linearity) results. The simulated saturated output power is 11.7 dBm with power added efficiency at 13 percent with the device working off a carrier frequency of 28 GHz.\",\"PeriodicalId\":351013,\"journal\":{\"name\":\"2020 31st Irish Signals and Systems Conference (ISSC)\",\"volume\":\"10 12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 31st Irish Signals and Systems Conference (ISSC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSC49989.2020.9180196\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 31st Irish Signals and Systems Conference (ISSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSC49989.2020.9180196","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design of a Non-Linear Sized I/Q Digital PA for 5G mm-Wave Communications in 28 nm CMOS
This paper presents the design of a DPA for 5G telecommunications applications in TSMC (Taiwan Semiconductor Manufacturing Company) 28 nm CMOS. A modified Gilbert cell is proposed to perform the function of amplification and reversing the phase within a compact layout, improving the efficiency. To overcome the linearity issue of DPAs, a non-linear sizing technique of the PA cells is employed. The effective widths of relative bit cells need to be increased to conform to non-linear sizing thus providing linearity with acceptable INL (Integral Non-Linearity)and DNL (Differential Non-Linearity) results. The simulated saturated output power is 11.7 dBm with power added efficiency at 13 percent with the device working off a carrier frequency of 28 GHz.