采用硅片键合技术制造的高速绝缘栅双极晶体管

Proceedings of Bipolar/Bicmos Circuits and Technology Meeting Pub Date : 1995-10-02 DOI:10.1109/BIPOL.1995.493899

S. Tu, G. Tam, P. Tam, A. Taomoto

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引用次数: 3

摘要

介绍了一种采用硅直接晶圆键合技术制备的高速IGBT。通过控制器件中重掺杂的n/sup +/缓冲层，在电流密度为100 A/cm/sup 2/时实现了1.4 V的导通电压降和小于100纳秒的关断下降时间。

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High-speed insulated-gate bipolar transistors fabricated using silicon wafer bonding

A high-speed IGBT fabricated using silicon direct wafer bonding is demonstrated. By controlling the heavily-doped n/sup +/ buffer layer in the device, an on-state voltage drop of 1.4 V at current density of 100 A/cm/sup 2/ and a turn-off fall time less than 100 nanoseconds are achieved.

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Proceedings of Bipolar/Bicmos Circuits and Technology Meeting

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