CMP缺陷减少和缓解:实践和未来趋势

W. Tseng, C. Boye, C. Silvestre, J. Chen, F. Lie, D. Canaperi
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引用次数: 2

摘要

发现在抛光毡晶片上添加缺陷的数量与颗粒状CMP缺陷尺寸的反比呈指数相关。较小的表面缺陷更丰富,更难以去除。衬垫表面孔隙几何形状可以影响抛光过程中碎屑的传输,从而调节抛光残留物(PR)、异物(FM)和划痕等缺陷的产生。护发素和调理过程也起作用。除了选择和优化清洗化学品和后清洗过程本身,整体CMP缺陷的减少和缓解必须考虑抛光模块中的事件和消耗品。对更精细和3D器件几何形状的驱动在缺陷检测和减少方面提出了进一步的挑战。
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CMP Defect Reduction and Mitigation: Practices and Future Trends
An exponential correlation is found to exist between the number of added defects on polished blanket wafers and the inverse of defect size for particulate CMP defects. Smaller surface defects are much more abundant and more difficult to remove. Pad surface pore geometry can influence the transport of debris during polish, and hence modulate the generation of defects such as polish residue (PR), foreign materials (FM), and scratches. The conditioner and conditioning process also plays a role. Besides the selection and optimization of cleaning chemical and post cleaning process itself, overall CMP defect reduction and mitigation must take into account the events and consumables in the polish modules. The drive towards finer and 3D device geometry presents further challenges in defect detection and reduction.
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