Performance enhancement of reconfigurable FET using gate workfunctlon, inter-gate length and inter-gate dielectric permittivity

In this paper, we have analyzed the performance enhancement of reconfigurable field effect transistor (RFET) using gate workfunction, inter-gate length and inter-gate dielectric permittivity through TCAD simulations. The parameters, ON current, OFF current and ION/IOFF ratio are extracted from the saturated ID-VG characteristics. When the inter-gate length is varied, enhanced ION/IOFF ratio is achieved comparing with the conventional RFET. Inter-gate dielectric permittivity variation also offers better ION/IOFF ratio comparatively.