高效cds -量子点敏化InGaN多量子阱太阳能电池

2012 Asia Communications and Photonics Conference (ACP) Pub Date : 2013-05-02 DOI:10.1364/ACPC.2012.AF4B.39

Y. Tsai, H. Chen, C. Lin, Hau-Vei Han, P. Yu, H. Kuo

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引用次数: 1

摘要

我们展示了一种结合胶体CdS量子点的InGaN/GaN多量子阱(MQW)太阳能电池的混合设计。与未涂覆CdS量子点的器件相比，CdS量子点具有长波抗反射特性和紫外下转换特性，有效地提高了整体功率转换效率，最高可达7.2%。

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Highly efficient CdS-quantum-dot-sensitized InGaN multiple quantum well solar cells

We demonstrate a hybrid design of InGaN/GaN multiple quantum well (MQW) solar cells combined with colloidal CdS quantum dots. With anti-reflective feature at long wavelength and down-conversion at UV regime, the CdS quantum dot effectively enhance the overall power conversion efficiency by as high as 7.2% compared to the no CdS quantum dots coated device.

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2012 Asia Communications and Photonics Conference (ACP)

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