{"title":"具有行波概念的毫米波SPDT开关mmic","authors":"Ma Jie, Yang Fei, Tang HuaiYu","doi":"10.1109/ICICM50929.2020.9292161","DOIUrl":null,"url":null,"abstract":"This paper describes the design of a D-band wide-band SPDT switch using 60nm GaN HEMT technology. The broadband characteristic has been realized by using the parasitic capacitance of the off-state HEMTs to form an artificial transmission line. The equivalent circuits of the on and off state HEMTs are developed and the design parameters of the traveling-wave switch have been calculated. The simulation results demonstrate that the insertion loss is less than 7dB, minimum Isolation on off state is 20dB over 130∼150GHz, the chip size is $1.5\\text{mm}^{\\ast}1.5\\text{mm}$.","PeriodicalId":364285,"journal":{"name":"2020 IEEE 5th International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Millimeter-Wave SPDT Switch MMICs With Travelling Wave Concept\",\"authors\":\"Ma Jie, Yang Fei, Tang HuaiYu\",\"doi\":\"10.1109/ICICM50929.2020.9292161\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes the design of a D-band wide-band SPDT switch using 60nm GaN HEMT technology. The broadband characteristic has been realized by using the parasitic capacitance of the off-state HEMTs to form an artificial transmission line. The equivalent circuits of the on and off state HEMTs are developed and the design parameters of the traveling-wave switch have been calculated. The simulation results demonstrate that the insertion loss is less than 7dB, minimum Isolation on off state is 20dB over 130∼150GHz, the chip size is $1.5\\\\text{mm}^{\\\\ast}1.5\\\\text{mm}$.\",\"PeriodicalId\":364285,\"journal\":{\"name\":\"2020 IEEE 5th International Conference on Integrated Circuits and Microsystems (ICICM)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-10-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE 5th International Conference on Integrated Circuits and Microsystems (ICICM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICICM50929.2020.9292161\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE 5th International Conference on Integrated Circuits and Microsystems (ICICM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICM50929.2020.9292161","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
摘要
本文介绍了一种采用60nm GaN HEMT技术的d波段宽带SPDT开关的设计。利用离态hemt的寄生电容形成人工传输线，实现了其宽带特性。设计了导通和关断状态hemt的等效电路，计算了行波开关的设计参数。仿真结果表明，在130 ~ 150GHz范围内，插入损耗小于7dB，最小隔离开关状态为20dB，芯片尺寸为$1.5\text{mm}^{\ast}1.5\text{mm}$。
Millimeter-Wave SPDT Switch MMICs With Travelling Wave Concept
This paper describes the design of a D-band wide-band SPDT switch using 60nm GaN HEMT technology. The broadband characteristic has been realized by using the parasitic capacitance of the off-state HEMTs to form an artificial transmission line. The equivalent circuits of the on and off state HEMTs are developed and the design parameters of the traveling-wave switch have been calculated. The simulation results demonstrate that the insertion loss is less than 7dB, minimum Isolation on off state is 20dB over 130∼150GHz, the chip size is $1.5\text{mm}^{\ast}1.5\text{mm}$.
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