{"title":"离子辐照在电阻式存储器件中的作用","authors":"S. Kaushik, S. Pandey, R. Singhal","doi":"10.1109/SMART52563.2021.9676282","DOIUrl":null,"url":null,"abstract":"The paper describes the effect of heavy ion irradiation on resistance switching behavior in zinc oxide deposited by RF sputtering on ITO-coated substrates. When annealed ZnO/ITO structures in oxygen atmosphere are bombarded with Ag+8 ions, they exhibit hysteresis in current-voltage curves caused by an increase in the resistance ratio, whereas the pristine samples (annealed in oxygen) exhibit linear characteristics. As compared to the changes in (OV-) oxygen vacancies at the interface, the changes in defect density caused by heavy ion irradiation give rise to metallic filaments, which are a main cause of resistance switching in ZnO.","PeriodicalId":356096,"journal":{"name":"2021 10th International Conference on System Modeling & Advancement in Research Trends (SMART)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Role of Ion Irradiation in Resistive Memory Devices\",\"authors\":\"S. Kaushik, S. Pandey, R. Singhal\",\"doi\":\"10.1109/SMART52563.2021.9676282\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper describes the effect of heavy ion irradiation on resistance switching behavior in zinc oxide deposited by RF sputtering on ITO-coated substrates. When annealed ZnO/ITO structures in oxygen atmosphere are bombarded with Ag+8 ions, they exhibit hysteresis in current-voltage curves caused by an increase in the resistance ratio, whereas the pristine samples (annealed in oxygen) exhibit linear characteristics. As compared to the changes in (OV-) oxygen vacancies at the interface, the changes in defect density caused by heavy ion irradiation give rise to metallic filaments, which are a main cause of resistance switching in ZnO.\",\"PeriodicalId\":356096,\"journal\":{\"name\":\"2021 10th International Conference on System Modeling & Advancement in Research Trends (SMART)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 10th International Conference on System Modeling & Advancement in Research Trends (SMART)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMART52563.2021.9676282\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 10th International Conference on System Modeling & Advancement in Research Trends (SMART)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMART52563.2021.9676282","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Role of Ion Irradiation in Resistive Memory Devices
The paper describes the effect of heavy ion irradiation on resistance switching behavior in zinc oxide deposited by RF sputtering on ITO-coated substrates. When annealed ZnO/ITO structures in oxygen atmosphere are bombarded with Ag+8 ions, they exhibit hysteresis in current-voltage curves caused by an increase in the resistance ratio, whereas the pristine samples (annealed in oxygen) exhibit linear characteristics. As compared to the changes in (OV-) oxygen vacancies at the interface, the changes in defect density caused by heavy ion irradiation give rise to metallic filaments, which are a main cause of resistance switching in ZnO.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
