Research on Heavy Ion and Proton Irradiation Test of a ReRAM Memory

Non-volatile memories play important roles in aerospace electronic systems for data storage. Among them, the resistive random access memory (ReRAM) is a non-volatile memory with no charge storage. ReRAM has the advantages of fast erase speed, high storage density, high repetition times, multiple storage and three-dimensional storage. This paper introduces the working principle of ReRAM, selects a typical commercial ReRAM memory as the research object, and conducts the heavy ion and proton single event effect sensitivity test. According to the test results, the sensitive parts of the chip are analyzed. The functional interrupts rate of single event effect on orbit is calculated and predicted by using the special software foreCAST, and the specific suggestions for on orbit application are given. It is proved that the device has good anti-radiation performance by flight test.