{"title":"一种90纳米CMOS无源混频器的k波段UWB接收机前端","authors":"K. G. Kjelgård, T. Lande","doi":"10.1109/ICUWB.2013.6663844","DOIUrl":null,"url":null,"abstract":"This paper presents a K-band UWB RF receiver front-end implemented in 90 nm CMOS technology. The receiver is based on a quadrature direct down-conversion architecture for non-coherent pulse detection. The receiver prototype chip includes LNA, quadrature passive mixers, quadrature voltage controlled oscillator and buffers. To ensure wideband operation throughout the receiver chain, inter-stage matching is necessary. By utilizing the impedance frequency up-conversion of the passive mixers, an on-chip series inductor provide a very wideband matching for the LNA output. Measurements of the receiver show a -3 dB bandwidth of 5.4 GHz with a voltage conversion gain of 10 dB and a measured power consumption of 38 mW.","PeriodicalId":159159,"journal":{"name":"2013 IEEE International Conference on Ultra-Wideband (ICUWB)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"A K-band UWB receiver front-end with passive mixer in 90 nm CMOS\",\"authors\":\"K. G. Kjelgård, T. Lande\",\"doi\":\"10.1109/ICUWB.2013.6663844\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a K-band UWB RF receiver front-end implemented in 90 nm CMOS technology. The receiver is based on a quadrature direct down-conversion architecture for non-coherent pulse detection. The receiver prototype chip includes LNA, quadrature passive mixers, quadrature voltage controlled oscillator and buffers. To ensure wideband operation throughout the receiver chain, inter-stage matching is necessary. By utilizing the impedance frequency up-conversion of the passive mixers, an on-chip series inductor provide a very wideband matching for the LNA output. Measurements of the receiver show a -3 dB bandwidth of 5.4 GHz with a voltage conversion gain of 10 dB and a measured power consumption of 38 mW.\",\"PeriodicalId\":159159,\"journal\":{\"name\":\"2013 IEEE International Conference on Ultra-Wideband (ICUWB)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-11-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Conference on Ultra-Wideband (ICUWB)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICUWB.2013.6663844\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Conference on Ultra-Wideband (ICUWB)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICUWB.2013.6663844","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A K-band UWB receiver front-end with passive mixer in 90 nm CMOS
This paper presents a K-band UWB RF receiver front-end implemented in 90 nm CMOS technology. The receiver is based on a quadrature direct down-conversion architecture for non-coherent pulse detection. The receiver prototype chip includes LNA, quadrature passive mixers, quadrature voltage controlled oscillator and buffers. To ensure wideband operation throughout the receiver chain, inter-stage matching is necessary. By utilizing the impedance frequency up-conversion of the passive mixers, an on-chip series inductor provide a very wideband matching for the LNA output. Measurements of the receiver show a -3 dB bandwidth of 5.4 GHz with a voltage conversion gain of 10 dB and a measured power consumption of 38 mW.