采用0.8-/spl μ m光刻技术，形成极窄发射极(0.3 /spl μ m)双多晶硅双极晶体管的双间隔技术

Proceedings of Bipolar/Bicmos Circuits and Technology Meeting Pub Date : 1995-10-02 DOI:10.1109/BIPOL.1995.493875

C. Tsai, B. Scharf, P. Garone, P. Humphries, K. O

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摘要

双多晶硅双极晶体管的发射极宽度为0.3 /spl mu/m，采用0.8-/spl mu/m光刻和双间隔工艺实现。通过结构和电气测量证实了发射极宽度的减小。双间隔装置具有优异的低电流f/sub T/和f/sub max/。

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A double-spacer technology for the formation of very narrow emitter (0.3 /spl mu/m) double-polysilicon bipolar transistors using 0.8-/spl mu/m photolithography

Emitter widths of 0.3 /spl mu/m on double-polysilicon bipolar transistors are achieved using 0.8-/spl mu/m photolithography and a double-spacer process. The emitter width reduction is confirmed with structural and electrical measurements. The double-spacer device exhibits superior low current f/sub T/ and f/sub max/.

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Proceedings of Bipolar/Bicmos Circuits and Technology Meeting

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