{"title":"具有自热效应的纳米片mosfet","authors":"P. Srinivas, Arun Kumar, P. Tiwari","doi":"10.1109/SILCON55242.2022.10028932","DOIUrl":null,"url":null,"abstract":"Using well-calibrated electro-thermal simulations, the impact of self-heating on distortion parameters such as second-order harmonic distortion (HD2) and third-order harmonic distortion (HD3) characteristics has been investigated in this work. The presence of the self-heating effect degrades the RF characteristics of InGaAs nanosheet FETs. The influence of TA on distortion parameters is also examined by altering the ambient temperature (TA) from 300K to 360K. Our simulation anticipates a shift in distortion performance of InGaAs nanosheet FETs by increasing HD2 and HD3 by 25% and 4%, respectively, for a temperature increase of 60K above room temperature. With the introduction of highly thermally conducting buried oxide materials, the change in distortion performance of the InGaAs nanosheet MOSFET has also been observed with the rise in the minima of HD2 and HD3.","PeriodicalId":183947,"journal":{"name":"2022 IEEE Silchar Subsection Conference (SILCON)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"In0.53Ga0.47As Nanosheet MOSFETs with Self-Heating Effects\",\"authors\":\"P. Srinivas, Arun Kumar, P. Tiwari\",\"doi\":\"10.1109/SILCON55242.2022.10028932\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Using well-calibrated electro-thermal simulations, the impact of self-heating on distortion parameters such as second-order harmonic distortion (HD2) and third-order harmonic distortion (HD3) characteristics has been investigated in this work. The presence of the self-heating effect degrades the RF characteristics of InGaAs nanosheet FETs. The influence of TA on distortion parameters is also examined by altering the ambient temperature (TA) from 300K to 360K. Our simulation anticipates a shift in distortion performance of InGaAs nanosheet FETs by increasing HD2 and HD3 by 25% and 4%, respectively, for a temperature increase of 60K above room temperature. With the introduction of highly thermally conducting buried oxide materials, the change in distortion performance of the InGaAs nanosheet MOSFET has also been observed with the rise in the minima of HD2 and HD3.\",\"PeriodicalId\":183947,\"journal\":{\"name\":\"2022 IEEE Silchar Subsection Conference (SILCON)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-11-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE Silchar Subsection Conference (SILCON)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SILCON55242.2022.10028932\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Silchar Subsection Conference (SILCON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SILCON55242.2022.10028932","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In0.53Ga0.47As Nanosheet MOSFETs with Self-Heating Effects
Using well-calibrated electro-thermal simulations, the impact of self-heating on distortion parameters such as second-order harmonic distortion (HD2) and third-order harmonic distortion (HD3) characteristics has been investigated in this work. The presence of the self-heating effect degrades the RF characteristics of InGaAs nanosheet FETs. The influence of TA on distortion parameters is also examined by altering the ambient temperature (TA) from 300K to 360K. Our simulation anticipates a shift in distortion performance of InGaAs nanosheet FETs by increasing HD2 and HD3 by 25% and 4%, respectively, for a temperature increase of 60K above room temperature. With the introduction of highly thermally conducting buried oxide materials, the change in distortion performance of the InGaAs nanosheet MOSFET has also been observed with the rise in the minima of HD2 and HD3.
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