L. Tan, W. Soong, S. Tan, Y. L. Goh, M. Steer, J. Ng, J. David, I. Marko, J. Chamings, J. Allam, S. Sweeney, A. Adams
{"title":"InxGa1-xAs1-yNy中的暗电流机制","authors":"L. Tan, W. Soong, S. Tan, Y. L. Goh, M. Steer, J. Ng, J. David, I. Marko, J. Chamings, J. Allam, S. Sweeney, A. Adams","doi":"10.1109/LEOS.2009.5343290","DOIUrl":null,"url":null,"abstract":"In order to extend the photo response of GaAs to optical telecommunication wavelengths, In and N can be incorporated into GaAs to yield a perfect lattice match of In<sub>x</sub>Ga<sub>1-x</sub>As<sub>1-y</sub>N<sub>y</sub> with GaAs with a bandgap that strongly decreases with increasing N composition. The potential usage of such a material as photodetectors and photovoltaic applications has been reported.In this work, we investigate the dark current mechanisms in the In<sub>x</sub>Ga<sub>1-x</sub>As<sub>1-y</sub>N<sub>y</sub> material.","PeriodicalId":269220,"journal":{"name":"2009 IEEE LEOS Annual Meeting Conference Proceedings","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Dark current mechanisms in InxGa1-xAs1-yNy\",\"authors\":\"L. Tan, W. Soong, S. Tan, Y. L. Goh, M. Steer, J. Ng, J. David, I. Marko, J. Chamings, J. Allam, S. Sweeney, A. Adams\",\"doi\":\"10.1109/LEOS.2009.5343290\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In order to extend the photo response of GaAs to optical telecommunication wavelengths, In and N can be incorporated into GaAs to yield a perfect lattice match of In<sub>x</sub>Ga<sub>1-x</sub>As<sub>1-y</sub>N<sub>y</sub> with GaAs with a bandgap that strongly decreases with increasing N composition. The potential usage of such a material as photodetectors and photovoltaic applications has been reported.In this work, we investigate the dark current mechanisms in the In<sub>x</sub>Ga<sub>1-x</sub>As<sub>1-y</sub>N<sub>y</sub> material.\",\"PeriodicalId\":269220,\"journal\":{\"name\":\"2009 IEEE LEOS Annual Meeting Conference Proceedings\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 IEEE LEOS Annual Meeting Conference Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LEOS.2009.5343290\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE LEOS Annual Meeting Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LEOS.2009.5343290","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In order to extend the photo response of GaAs to optical telecommunication wavelengths, In and N can be incorporated into GaAs to yield a perfect lattice match of InxGa1-xAs1-yNy with GaAs with a bandgap that strongly decreases with increasing N composition. The potential usage of such a material as photodetectors and photovoltaic applications has been reported.In this work, we investigate the dark current mechanisms in the InxGa1-xAs1-yNy material.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
