反馈冗余:用于深亚微米技术的高能效容错锁存器设计

M. Fazeli, A. Patooghy, S. Miremadi, A. Ejlali
{"title":"反馈冗余:用于深亚微米技术的高能效容错锁存器设计","authors":"M. Fazeli, A. Patooghy, S. Miremadi, A. Ejlali","doi":"10.1109/DSN.2007.51","DOIUrl":null,"url":null,"abstract":"The continuous decrease in CMOS technology feature size increases the susceptibility of such circuits to single event upsets (SEU) caused by the impact of particle strikes on system flip flops. This paper presents a novel SEU-tolerant latch where redundant feedback lines are used to mask the effects of SEUs. The power dissipation, area, reliability, and propagation delay of the presented SEU-tolerant latch are analyzed by SPICE simulations. The results show that this latch consumes about 50% less power and occupies 42% less area than a TMR-latch. However, the reliability and the propagation delay of the proposed latch are still the same as the TMR-latch. the reliability of the proposed latch is also compared with other SEU-tolerant latches.","PeriodicalId":405751,"journal":{"name":"37th Annual IEEE/IFIP International Conference on Dependable Systems and Networks (DSN'07)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2007-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"72","resultStr":"{\"title\":\"Feedback Redundancy: A Power Efficient SEU-Tolerant Latch Design for Deep Sub-Micron Technologies\",\"authors\":\"M. Fazeli, A. Patooghy, S. Miremadi, A. Ejlali\",\"doi\":\"10.1109/DSN.2007.51\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The continuous decrease in CMOS technology feature size increases the susceptibility of such circuits to single event upsets (SEU) caused by the impact of particle strikes on system flip flops. This paper presents a novel SEU-tolerant latch where redundant feedback lines are used to mask the effects of SEUs. The power dissipation, area, reliability, and propagation delay of the presented SEU-tolerant latch are analyzed by SPICE simulations. The results show that this latch consumes about 50% less power and occupies 42% less area than a TMR-latch. However, the reliability and the propagation delay of the proposed latch are still the same as the TMR-latch. the reliability of the proposed latch is also compared with other SEU-tolerant latches.\",\"PeriodicalId\":405751,\"journal\":{\"name\":\"37th Annual IEEE/IFIP International Conference on Dependable Systems and Networks (DSN'07)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-06-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"72\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"37th Annual IEEE/IFIP International Conference on Dependable Systems and Networks (DSN'07)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DSN.2007.51\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"37th Annual IEEE/IFIP International Conference on Dependable Systems and Networks (DSN'07)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DSN.2007.51","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 72

摘要

CMOS技术特征尺寸的不断减小增加了这种电路对单事件扰流(SEU)的敏感性,这是由于粒子撞击对系统触发器的影响造成的。本文提出了一种新的容错锁存器,该锁存器采用冗余反馈线来掩盖容错锁存器的影响。通过SPICE仿真分析了该锁存器的功耗、面积、可靠性和传播延迟。结果表明,该锁存器的功耗比tmr锁存器低50%,占用的面积比tmr锁存器小42%。然而,该锁存器的可靠性和传播延迟仍然与tmr锁存器相同。该锁存器的可靠性也与其他容错锁存器进行了比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Feedback Redundancy: A Power Efficient SEU-Tolerant Latch Design for Deep Sub-Micron Technologies
The continuous decrease in CMOS technology feature size increases the susceptibility of such circuits to single event upsets (SEU) caused by the impact of particle strikes on system flip flops. This paper presents a novel SEU-tolerant latch where redundant feedback lines are used to mask the effects of SEUs. The power dissipation, area, reliability, and propagation delay of the presented SEU-tolerant latch are analyzed by SPICE simulations. The results show that this latch consumes about 50% less power and occupies 42% less area than a TMR-latch. However, the reliability and the propagation delay of the proposed latch are still the same as the TMR-latch. the reliability of the proposed latch is also compared with other SEU-tolerant latches.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Application of Software Watchdog as a Dependability Software Service for Automotive Safety Relevant Systems Using Process-Level Redundancy to Exploit Multiple Cores for Transient Fault Tolerance DSN 2007 Tutorials Reliability Techniques for RFID-Based Object Tracking Applications Minimizing Response Time for Quorum-System Protocols over Wide-Area Networks
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1