{"title":"带补偿环阳极短路的功率GTO","authors":"C. Zhang, N. Xu, Z. Chen","doi":"10.1109/PESC.1999.789033","DOIUrl":null,"url":null,"abstract":"A novel design concept for achieving superior performance of ring anode-short GTO is presented in this paper. The compensated ring anode-short is based on the nonuniform ring short pattern on the anode-side to compensate the effect of nonuniform distribution of gate turn-off reverse voltage re-biased on the cathode-side. By additional local lifetime killer of proton irradiation, the new design i.e. compensated ring anode-short, enables us to attain better turn-off performance when compared to conventional uniform ring anode-short, resulting in high turn-off ability and low tail current for high current GTOs. Experimental and manufactured devices are presented to verify the new concept.","PeriodicalId":292317,"journal":{"name":"30th Annual IEEE Power Electronics Specialists Conference. Record. (Cat. No.99CH36321)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Power GTO with compensated ring anode short\",\"authors\":\"C. Zhang, N. Xu, Z. Chen\",\"doi\":\"10.1109/PESC.1999.789033\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel design concept for achieving superior performance of ring anode-short GTO is presented in this paper. The compensated ring anode-short is based on the nonuniform ring short pattern on the anode-side to compensate the effect of nonuniform distribution of gate turn-off reverse voltage re-biased on the cathode-side. By additional local lifetime killer of proton irradiation, the new design i.e. compensated ring anode-short, enables us to attain better turn-off performance when compared to conventional uniform ring anode-short, resulting in high turn-off ability and low tail current for high current GTOs. Experimental and manufactured devices are presented to verify the new concept.\",\"PeriodicalId\":292317,\"journal\":{\"name\":\"30th Annual IEEE Power Electronics Specialists Conference. Record. (Cat. No.99CH36321)\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-06-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"30th Annual IEEE Power Electronics Specialists Conference. Record. (Cat. No.99CH36321)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PESC.1999.789033\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"30th Annual IEEE Power Electronics Specialists Conference. Record. (Cat. No.99CH36321)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PESC.1999.789033","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A novel design concept for achieving superior performance of ring anode-short GTO is presented in this paper. The compensated ring anode-short is based on the nonuniform ring short pattern on the anode-side to compensate the effect of nonuniform distribution of gate turn-off reverse voltage re-biased on the cathode-side. By additional local lifetime killer of proton irradiation, the new design i.e. compensated ring anode-short, enables us to attain better turn-off performance when compared to conventional uniform ring anode-short, resulting in high turn-off ability and low tail current for high current GTOs. Experimental and manufactured devices are presented to verify the new concept.