{"title":"高效无线电力传输GaN肖特基二极管整流电路拓扑优化研究","authors":"Mohan Kumar Y.N, P. Duraiswamy","doi":"10.1109/APMC.2016.7931312","DOIUrl":null,"url":null,"abstract":"The purpose of this work is to maximize the efficiency of rectifier topologies used for wireless power transmission system operating at 2.4 GHz. This paper particularly presents the design of GaN Schottky diode rectifier circuit topologies including series diode half wave rectifier, shunt diode half wave rectifier and voltage doubler rectifier. Micro-strip matching networks are designed and optimized to reduce the reflection losses and increase the efficiency of the rectifier. A comparative study shows that the voltage doubler rectifier has higher efficiency than the series and shunt diode rectifiers. The simulation results show that the GaN Schottky diode voltage doubler rectifier circuit gives an efficiency of 78.2 percentage with an input power of 34 dBm when using a load resistance of 1000 Ohms.","PeriodicalId":166478,"journal":{"name":"2016 Asia-Pacific Microwave Conference (APMC)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"On the optimization of GaN Schottky Diode rectifier circuit topologies for high efficiency Wireless Power Transmission\",\"authors\":\"Mohan Kumar Y.N, P. Duraiswamy\",\"doi\":\"10.1109/APMC.2016.7931312\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The purpose of this work is to maximize the efficiency of rectifier topologies used for wireless power transmission system operating at 2.4 GHz. This paper particularly presents the design of GaN Schottky diode rectifier circuit topologies including series diode half wave rectifier, shunt diode half wave rectifier and voltage doubler rectifier. Micro-strip matching networks are designed and optimized to reduce the reflection losses and increase the efficiency of the rectifier. A comparative study shows that the voltage doubler rectifier has higher efficiency than the series and shunt diode rectifiers. The simulation results show that the GaN Schottky diode voltage doubler rectifier circuit gives an efficiency of 78.2 percentage with an input power of 34 dBm when using a load resistance of 1000 Ohms.\",\"PeriodicalId\":166478,\"journal\":{\"name\":\"2016 Asia-Pacific Microwave Conference (APMC)\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 Asia-Pacific Microwave Conference (APMC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APMC.2016.7931312\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 Asia-Pacific Microwave Conference (APMC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APMC.2016.7931312","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
On the optimization of GaN Schottky Diode rectifier circuit topologies for high efficiency Wireless Power Transmission
The purpose of this work is to maximize the efficiency of rectifier topologies used for wireless power transmission system operating at 2.4 GHz. This paper particularly presents the design of GaN Schottky diode rectifier circuit topologies including series diode half wave rectifier, shunt diode half wave rectifier and voltage doubler rectifier. Micro-strip matching networks are designed and optimized to reduce the reflection losses and increase the efficiency of the rectifier. A comparative study shows that the voltage doubler rectifier has higher efficiency than the series and shunt diode rectifiers. The simulation results show that the GaN Schottky diode voltage doubler rectifier circuit gives an efficiency of 78.2 percentage with an input power of 34 dBm when using a load resistance of 1000 Ohms.
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