1 GHz AlN轮廓模谐振器的消弧化杂散模抑制

M. Giovannini, S. Yazici, N. Kuo, G. Piazza
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引用次数: 17

摘要

本文首次报道了在1ghz MEMS AlN轮廓模谐振器(cmr[1])上应用消光技术有效抑制主机械共振附近的杂散模式。这个概念已经应用于各种单端口谐振器,这些谐振器由铝制成的图案顶部电极和由铂制成的浮动底部电极夹在AlN薄膜中形成。正如三维COMSOL模拟所预测的那样,在不影响谐振器质量因子和机电耦合系数的情况下,完全消除了这些谐振器导纳图中的杂散响应。
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Spurious mode suppression via apodization for 1 GHz AlN Contour-Mode Resonators
This paper reports, for the first time, on the application of apodization techniques to 1 GHz MEMS AlN Contour-Mode Resonators (CMRs [1]) to efficiently suppress spurious modes in close proximity of the main mechanical resonance. This concept has been applied with excellent results to a variety of one port resonators formed by patterned top electrodes made out of Aluminum, and a floating bottom electrode made out of Platinum sandwiching the AlN film. As also predicted by 3D COMSOL simulations, a complete elimination of spurious responses in the admittance plot of these resonators is attained without impacting their quality factor and electromechanical coupling coefficient.
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