一种65nm触发器阵列,用于测量对高能中子和α粒子的软错误弹性

J. Furuta, C. Hamanaka, Kazutoshi Kobayashi, H. Onodera
{"title":"一种65nm触发器阵列,用于测量对高能中子和α粒子的软错误弹性","authors":"J. Furuta, C. Hamanaka, Kazutoshi Kobayashi, H. Onodera","doi":"10.1109/ASPDAC.2011.5722306","DOIUrl":null,"url":null,"abstract":"We fabricated a 65nm LSI including flip-flop array to measure soft error resiliency against high-energy neutron and alpha particles. It consists of two FF arrays as follows. One is an array composed of redundant FFs to confirm radiation hardness of the proposed and conventional redundant FFs. The other is an array composed of conventional D-FFs to measure SEU (Single Event Upset) and MCU(Multiple Cell Upset) by the distance from tap cells.","PeriodicalId":316253,"journal":{"name":"16th Asia and South Pacific Design Automation Conference (ASP-DAC 2011)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"A 65nm flip-flop array to measure soft error resiliency against high-energy neutron and alpha particles\",\"authors\":\"J. Furuta, C. Hamanaka, Kazutoshi Kobayashi, H. Onodera\",\"doi\":\"10.1109/ASPDAC.2011.5722306\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We fabricated a 65nm LSI including flip-flop array to measure soft error resiliency against high-energy neutron and alpha particles. It consists of two FF arrays as follows. One is an array composed of redundant FFs to confirm radiation hardness of the proposed and conventional redundant FFs. The other is an array composed of conventional D-FFs to measure SEU (Single Event Upset) and MCU(Multiple Cell Upset) by the distance from tap cells.\",\"PeriodicalId\":316253,\"journal\":{\"name\":\"16th Asia and South Pacific Design Automation Conference (ASP-DAC 2011)\",\"volume\":\"28 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-01-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"16th Asia and South Pacific Design Automation Conference (ASP-DAC 2011)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASPDAC.2011.5722306\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"16th Asia and South Pacific Design Automation Conference (ASP-DAC 2011)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASPDAC.2011.5722306","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8

摘要

我们制作了一个包含触发器阵列的65nm大规模集成电路,用于测量高能中子和α粒子的软误差弹性。它由如下两个FF数组组成。一个是由冗余FFs组成的阵列,以确定所提出的冗余FFs和常规冗余FFs的辐射硬度。另一种是由传统的d - ff组成的阵列,通过与分接单元的距离来测量SEU(单事件扰动)和MCU(多单元扰动)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
A 65nm flip-flop array to measure soft error resiliency against high-energy neutron and alpha particles
We fabricated a 65nm LSI including flip-flop array to measure soft error resiliency against high-energy neutron and alpha particles. It consists of two FF arrays as follows. One is an array composed of redundant FFs to confirm radiation hardness of the proposed and conventional redundant FFs. The other is an array composed of conventional D-FFs to measure SEU (Single Event Upset) and MCU(Multiple Cell Upset) by the distance from tap cells.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Register pressure aware scheduling for high level synthesis Robust and efficient baseband receiver design for MB-OFDM UWB system Area-efficient FPGA logic elements: Architecture and synthesis Utilizing high level design information to speed up post-silicon debugging Device-parameter estimation with on-chip variation sensors considering random variability
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1