{"title":"基于III-V的长波QWIP性能分析","authors":"M. A. Billaha, M. Das","doi":"10.1109/ICMAP.2013.6733550","DOIUrl":null,"url":null,"abstract":"Aim of the present work is to investigate the performance of GaAs/AlxGa1-xAs quantum well infrared photodetector (QWIP) using theoretical modeling via transfer matrix method and using professional device simulation software, APSYS. Model is verified with experimental data and various performance characteristics are obtained for intersubband transition in QWIP. Peak absorption occurs at wavelength of 8.75 μm using APSYS and at 8.52 μm using theoretical calculation.","PeriodicalId":286435,"journal":{"name":"2013 International Conference on Microwave and Photonics (ICMAP)","volume":"80 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Performance analysis of III–V based long wavelength QWIP\",\"authors\":\"M. A. Billaha, M. Das\",\"doi\":\"10.1109/ICMAP.2013.6733550\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Aim of the present work is to investigate the performance of GaAs/AlxGa1-xAs quantum well infrared photodetector (QWIP) using theoretical modeling via transfer matrix method and using professional device simulation software, APSYS. Model is verified with experimental data and various performance characteristics are obtained for intersubband transition in QWIP. Peak absorption occurs at wavelength of 8.75 μm using APSYS and at 8.52 μm using theoretical calculation.\",\"PeriodicalId\":286435,\"journal\":{\"name\":\"2013 International Conference on Microwave and Photonics (ICMAP)\",\"volume\":\"80 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 International Conference on Microwave and Photonics (ICMAP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMAP.2013.6733550\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 International Conference on Microwave and Photonics (ICMAP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMAP.2013.6733550","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Performance analysis of III–V based long wavelength QWIP
Aim of the present work is to investigate the performance of GaAs/AlxGa1-xAs quantum well infrared photodetector (QWIP) using theoretical modeling via transfer matrix method and using professional device simulation software, APSYS. Model is verified with experimental data and various performance characteristics are obtained for intersubband transition in QWIP. Peak absorption occurs at wavelength of 8.75 μm using APSYS and at 8.52 μm using theoretical calculation.
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