{"title":"一种基于BiCMOS技术的ab类高速低功耗运放","authors":"S. Sen, B. Leung","doi":"10.1109/BIPOL.1995.493857","DOIUrl":null,"url":null,"abstract":"A low-power, high-speed BiCMOS op amp is described. It uses a wideband, composite PMOS-vertical-NPN structure as a substitute for vertical-PNP transistors to realize a Class-AB input stage with very high small and large signal transconductances and op amp slew-rate.","PeriodicalId":230944,"journal":{"name":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A Class-AB high-speed low-power op amp in BiCMOS technology\",\"authors\":\"S. Sen, B. Leung\",\"doi\":\"10.1109/BIPOL.1995.493857\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A low-power, high-speed BiCMOS op amp is described. It uses a wideband, composite PMOS-vertical-NPN structure as a substitute for vertical-PNP transistors to realize a Class-AB input stage with very high small and large signal transconductances and op amp slew-rate.\",\"PeriodicalId\":230944,\"journal\":{\"name\":\"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.1995.493857\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1995.493857","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Class-AB high-speed low-power op amp in BiCMOS technology
A low-power, high-speed BiCMOS op amp is described. It uses a wideband, composite PMOS-vertical-NPN structure as a substitute for vertical-PNP transistors to realize a Class-AB input stage with very high small and large signal transconductances and op amp slew-rate.
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