用于WLAN的18Ghz LNA FET高增益放大器

2009 Mediterrannean Microwave Symposium (MMS) Pub Date : 2009-11-01 DOI:10.1109/MMS.2009.5409824

Alireza Habibzadeh, Mohamad Naser Moghaddasi, M. Jalali

{"title":"用于WLAN的18Ghz LNA FET高增益放大器","authors":"Alireza Habibzadeh, Mohamad Naser Moghaddasi, M. Jalali","doi":"10.1109/MMS.2009.5409824","DOIUrl":null,"url":null,"abstract":"In this article we design a novel ka band low noise amplifier with high stability. in this design Ga FET used to high gain and low noise figure and conditional and unconditional stability. We applied a low noise cost solution for various Ka band receivers such as P-to-P radio, WLAN and UWB sensors. Finally circuit layout with ADS software is presented and very low noise figure about 1.3dB and about 16dB gain was taken.","PeriodicalId":300247,"journal":{"name":"2009 Mediterrannean Microwave Symposium (MMS)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An 18Ghz LNA Ga FET high gain amplifier for WLAN\",\"authors\":\"Alireza Habibzadeh, Mohamad Naser Moghaddasi, M. Jalali\",\"doi\":\"10.1109/MMS.2009.5409824\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this article we design a novel ka band low noise amplifier with high stability. in this design Ga FET used to high gain and low noise figure and conditional and unconditional stability. We applied a low noise cost solution for various Ka band receivers such as P-to-P radio, WLAN and UWB sensors. Finally circuit layout with ADS software is presented and very low noise figure about 1.3dB and about 16dB gain was taken.\",\"PeriodicalId\":300247,\"journal\":{\"name\":\"2009 Mediterrannean Microwave Symposium (MMS)\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 Mediterrannean Microwave Symposium (MMS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MMS.2009.5409824\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 Mediterrannean Microwave Symposium (MMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MMS.2009.5409824","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文设计了一种新颖的ka波段高稳定性低噪声放大器。在本设计中，采用了高增益、低噪声、条件和无条件稳定的Ga场效应管。我们为各种Ka波段接收器(如p对p无线电，WLAN和UWB传感器)应用了低噪声成本解决方案。最后利用ADS软件给出了电路布置图，得到了低噪声系数约1.3dB，增益约16dB的电路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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An 18Ghz LNA Ga FET high gain amplifier for WLAN

In this article we design a novel ka band low noise amplifier with high stability. in this design Ga FET used to high gain and low noise figure and conditional and unconditional stability. We applied a low noise cost solution for various Ka band receivers such as P-to-P radio, WLAN and UWB sensors. Finally circuit layout with ADS software is presented and very low noise figure about 1.3dB and about 16dB gain was taken.

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2009 Mediterrannean Microwave Symposium (MMS)

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