{"title":"双极晶体管结电容测量新技术","authors":"K. Joardar","doi":"10.1109/BIPOL.1995.493882","DOIUrl":null,"url":null,"abstract":"A new methodology for measuring p/n junction capacitance is demonstrated. The method is dc based making it suitable for use in automated high volume measurements. The validity of the technique is supported by both simulated and experimentally measured data.","PeriodicalId":230944,"journal":{"name":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","volume":"191 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"A new technique for measuring junction capacitance in bipolar transistors\",\"authors\":\"K. Joardar\",\"doi\":\"10.1109/BIPOL.1995.493882\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new methodology for measuring p/n junction capacitance is demonstrated. The method is dc based making it suitable for use in automated high volume measurements. The validity of the technique is supported by both simulated and experimentally measured data.\",\"PeriodicalId\":230944,\"journal\":{\"name\":\"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting\",\"volume\":\"191 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.1995.493882\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1995.493882","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new technique for measuring junction capacitance in bipolar transistors
A new methodology for measuring p/n junction capacitance is demonstrated. The method is dc based making it suitable for use in automated high volume measurements. The validity of the technique is supported by both simulated and experimentally measured data.
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