A. Meléndez-Cano, S. A. Juarez-Cazares, J. A. Galaviz-Aguilar, J. R. Cárdenas-Valdez, M. J. García-Ortega, A. Calvillo-Téllez, P. Roblin, J. Nuñez-Perez
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引用次数: 3
摘要
本文针对射频功率放大器的三种不同的带记忆行为模型进行了研究。这些模型基于Volterra系列的原理,在Matlab-Simulink环境下进行了仿真,并在DSP-FPGA Altera Stratix III板上实现。基于RF-PA 10W的AM-AM和AM-PM失真曲线,通过不同程度的非线性和记忆深度对MPM、Hammerstein和Wiener模型进行了比较。结果表明,三种型号的NXP 10W GaN HEMT @ 3.0 GHz PA的度量NMSE在-30 dB范围内,表明其在FPGA实现期间具有很高的精度。
Behavioral Modeling for Power Amplifiers Comparing MPM, Wiener and Hammerstein with FPGA-Based Implementation
This paper aims on three different behavioral models with memory for radio frequency power amplifiers. These models are based on the principle of Volterra series, which were simulated in the Matlab-Simulink environment and implemented on a DSP-FPGA Altera Stratix III board. The MPM, Hammerstein and Wiener models were compared based on the distortion curves AM-AM and AM-PM of a RF-PA 10W through different levels of nonlinearity and memory depth. The results show the metric NMSE in the range of -30 dB for the three models of a NXP 10W GaN HEMT @ 3.0 GHz PA demonstrating its high accuracy during the FPGA implementation.