{"title":"MNOS记忆迟滞的模拟——层厚度的影响","authors":"K. Molnár, Z. Horváth","doi":"10.1109/SACI.2012.6250031","DOIUrl":null,"url":null,"abstract":"MNOS memory hysteresis curves are simulated by integrating the difference of the current via the oxide and nitride layer. The effect of the oxide and nitride thickness as well as the depth of charge centeroid is studied. The results indicate that the optimal oxide thickness is about 2 nm. A thin nitride layer decreases the efficiency of the injected charge. It has been obtained that the possible highest memory window width decreases monotonically with increasing depth of charge centroid.","PeriodicalId":293436,"journal":{"name":"2012 7th IEEE International Symposium on Applied Computational Intelligence and Informatics (SACI)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Simulation of MNOS memory hysteresis - Effect of layer thicknesses\",\"authors\":\"K. Molnár, Z. Horváth\",\"doi\":\"10.1109/SACI.2012.6250031\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"MNOS memory hysteresis curves are simulated by integrating the difference of the current via the oxide and nitride layer. The effect of the oxide and nitride thickness as well as the depth of charge centeroid is studied. The results indicate that the optimal oxide thickness is about 2 nm. A thin nitride layer decreases the efficiency of the injected charge. It has been obtained that the possible highest memory window width decreases monotonically with increasing depth of charge centroid.\",\"PeriodicalId\":293436,\"journal\":{\"name\":\"2012 7th IEEE International Symposium on Applied Computational Intelligence and Informatics (SACI)\",\"volume\":\"86 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-05-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 7th IEEE International Symposium on Applied Computational Intelligence and Informatics (SACI)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SACI.2012.6250031\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 7th IEEE International Symposium on Applied Computational Intelligence and Informatics (SACI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SACI.2012.6250031","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Simulation of MNOS memory hysteresis - Effect of layer thicknesses
MNOS memory hysteresis curves are simulated by integrating the difference of the current via the oxide and nitride layer. The effect of the oxide and nitride thickness as well as the depth of charge centeroid is studied. The results indicate that the optimal oxide thickness is about 2 nm. A thin nitride layer decreases the efficiency of the injected charge. It has been obtained that the possible highest memory window width decreases monotonically with increasing depth of charge centroid.
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