多集成电路源的辐射-发射影响

Val L. Erwin, K. Fischer
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引用次数: 0

摘要

电子产品的辐射排放量和辐射强度出现了令人无法接受的大幅增加,而该加工产品的辐射排放量和辐射强度却出现了大幅增加,这与集成电路(ic)的采购有关。在数据/添加地址总线上对这些设备产生的波形进行时域测量。从不同的集成电路源发射的辐射在频域上进行了测量。交换ic,即使是相同的设备类型,也会对EMC配置文件产生重大影响。
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Radiated-Emission Ramifications of Multiple IC Sourcing
An unaccep tab le increase in the rad ia ted emissions am plitudes of an e lectron ic d a ta processing product was a ttr ib u ted to m ultiple in teg ra ted -c ircu it (IC) sourcing. Conducted w aveform s genera ted by these devices on the data /add ress bus w ere m easured in the tim e domain. Emissions rad ia ted from various IC sources w ere m easured in the frequency domain a t an open-field te s t site . Interchanging ICs, even though of a sam e device type, had a significant im pact upon th e EMC profile.
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