高na EUV掩模3d抑制的多层优化

Extreme Ultraviolet Lithography 2020 Pub Date : 2020-09-20 DOI:10.1117/12.2574450

E. V. Setten, K. Rook, H. Mesilhy, F. Timmermans, G. Bottiglieri, Meng H. Lee, A. Erdmann, T. Brunner

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引用次数: 6

摘要

今天的EUV掩模在60入射角下进行了最大反射率优化，以支持0.33NA扫描仪的成像。高NA EUV扫描仪将具有0.55的NA和变形光学，以保持掩模水平上的角度与当前掩模兼容。然而，对于选定的用例，可以观察到增加的Mask-3D效果。在本次演讲中，我们将展示高na EUV中这些增强的M3D效果的根本原因和掩膜多层的作用，以及如何改进它。我们还将展示离子束沉积RuSi测试样品的一些初步实验结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Multilayer optimization for high-NA EUV mask3D suppression

Today’s EUV masks are optimized for maximum reflectivity at 6o angle of incidence to support imaging on the 0.33NA scanners. The High-NA EUV scanner will have an NA of 0.55 and anamorphic optics to keep the angles on mask level compatible with current masks. However, for selected use-cases increased Mask-3D effects are observed. In this presentation, we will show the root-cause of these enhanced M3D effects for High-NA EUV and the role of the mask multilayer, as well as how to improve it. We will also show some first experimental results of an ion beam deposited RuSi test sample.

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