探索剩余电荷对密码电路的影响

M. Shiozaki, T. Sugawara, T. Fujino
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引用次数: 0

摘要

建立泄漏模型对于设计对抗侧信道攻击(SCAs)具有重要意义,而汉明权重/距离(HW/HD)模型是传统的泄漏模型。使用微小电磁探针的电磁分析(EMA)攻击是最强大的sca。最近的研究报道,EMA攻击可以测量不包括在HW/HD模型中的SCA泄漏[16,19]。电流通路泄漏就是这样一种泄漏,镜像电路被引入作为对抗它的对策。我们通过实验发现,镜像电路不能充分隐藏(减少)EMA泄漏,导致堆叠晶体管之间的剩余电荷(RECs)泄漏机密信息。电流通路泄漏模型以及HW/HD泄漏模型中不包括REC泄漏。RECs可以在多个时钟周期内携带门的状态历史。因此,我们提出了一种针对REC泄漏的对策,并使用io掩模双轨只读存储器(MDR-ROM)设计了先进的加密标准128 (AES-128)电路,采用180 nm互补金属氧化物半导体(CMOS)工艺。我们比较了我们的AES-128电路在有和没有我们的对策的情况下对EMA攻击的弹性。我们还讨论了RECs对物理不可克隆功能(puf)的影响。RECs不会使PUF变得脆弱,但会影响PUF的性能。我们证明了RECs会影响我们用180纳米和40纳米CMOS工艺制造的仲裁puf (apuf)的性能。
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Exploring Effect of Residual Electric Charges on Cryptographic Circuits
Building leakage models is important in designing countermeasures against side-channel attacks (SCAs), and Hamming-weight/distance (HW/HD) models are traditional leakage models. Electromagnetic analysis (EMA) attacks using a tiny EM probe are the most powerful SCAs. Recent studies have reported that EMA attacks can measure SCA leaks not included in the HW/HD models [16,19]. A current-path leak is one such leak, and a mirror circuit was introduced as a countermeasure against it. We experimentally found that a mirror circuit insufficiently hides (decreases) EMA leaks, resulting in residual electric charges (RECs) between stacked transistors leaking secret information. REC leaks are not included in the current-path leakage model as well as the HW/HD leakage models. RECs can carry the history of the gate's state over multiple clock cycles. Therefore, we propose a countermeasure against REC leaks and designed advanced encryption standard-128 (AES-128) circuits using IO-masked dual-rail read-only memory (MDR-ROM) with a 180-nm complementary metal-oxide-semiconductor (CMOS) process. We compared the resilience of our AES-128 circuits against EMA attacks with and without our countermeasure. We also discuss RECs' effect on physically unclonable functions (PUFs). RECs do not make PUFs vulnerable but affect PUF performance. We demonstrate that RECs affect the performance of arbiter PUFs (APUFs) we fabricated with 180- and 40-nm CMOS processes.
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