Investigation of the ZnCuInS/ZnS based Quantum-dot Light-Emitting Diodes with different ZnO Film Thickness Prepared by RF Sputtering

In this research work, the performance of the fabricated Quantum-dot Light-Emitting Diode was measured, where the sputtered oxide layer (ZnO) was used as the carrier transport layer, and the thickness of the films were varied to check the current and power efficiency of the devices. The ZnO film was deposited using RF (radio frequency) sputtering process with mixed working gas and substrate temperature of 150°C. The structure of the film was characterized using FE-SEM and a semiconductor parameter analyzer. Moreover, the current efficiency (CE) of 6.55 cd/A was obtained for the ZnCuInS/ZnS-based QLEDs with yellow emission at 580 nm.